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  1 2 3 b a s e c o l l e c t o r e m i t t e r 1 2 3 MMBTA42 mmbta43 sot-23 high-voltage npn transistor surface mount lead(p b ) - f r ee p b weitron http://www.weitron.com.tw v v v c c maximum ratings (t a =25c unlesso therwise noted) collector-emitter voltage MMBTA42 mmbta43 collector-base voltage MMBTA42 mmbta43 300 200 value max i c v ceo v cbo v ebo collector current-continuous 500 ma emitter-base voltage MMBTA42 mmbta43 300 200 6.0 6.0 unit unit symbol symbol rating characteristics thermal characteristics device marking MMBTA42 = 1d , mmbta43 = m1e 1. fr-5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. total device dissipation fr-5 board (note.1) ta=25c derate above 25c junctionand temperature range storage temperature range thermal resistance, junctionto ambient (note.1) tstg t j -55 to +150 +150 556 225 1.8 c/w mw/c mw p d r ja total device dissipation alumina substrate (note.2) ta=25c derate above 25c thermal resistance, junctionto ambient (note.1) 417 300 2.4 c/w mw/c mw p d r ja 15-dec-06 1/4
- - - - v v - 0.9 - - - v v v o f f c h a r a c t e r i s t i c s 3 300 200 - - - - 300 200 - - - - 6.0 6.0 - - - - - - - - - - - - MMBTA42 mmbta43 weitron electrical characteristics (t a =25c unless otherwise noted) characteristics symbol min typ max unit collector-emitter breakdown voltage (i c =1.0ma, i b =0) MMBTA42 mmbta43 MMBTA42 mmbta43 MMBTA42 mmbta43 collector-base breakdown voltage (i c =10a, i e =0) emitter-base breakdown voltage (i e =100a, i c =0) collector cuto? current (v cb =200v, i e =0) (v cb =160v, i e =0) v (br)ceo v (br)cbo v (br)ebo i cbo a 0.1 0.1 emitter cuto? current (v eb =6.0v, i c =0) (v eb =4.0v, i c =0) i ebo a 0.1 0.1 on characteristics 3 MMBTA42 mmbta43 dc current gain (i c =1.0ma, v ce =10v) (i c =10ma, v ce =10v) (i c =30ma, v ce =10v) collector-emitter saturation voltage (i c =20ma, i b =2.0ma) 25 40 40 - - - - - - 0.5 - h fe v ce(sat) v be(sat) small-signal characteristics output capacitance (v cb =20v, i e =0, f=1.0mhz) current-gain-bandwidth product (i c =10ma, v ce =20v, f=100mhz) c cb f t 50 pf mhz 3.0 4.0 base-emitter saturation voltage (ic=10ma,ib=0.5ma) (ic=100ma,ib=5.0ma) weitron http://www.weitron.com.tw 15-dec-06 2/4 3. pulse test : pulse width 300s, duty cycle 2.0%.
1 . 0 2 . 0 3 . 0 5 . 0 7 . 0 1 0 2 0 3 0 5 0 7 0 1 0 0 8 0 7 0 6 0 5 0 4 0 3 0 2 0 1 0 i c , c o l l e c t o r c u r r e n t ( m a ) f i g u r e , 3 c u r r e n t - g a i n - b a n d w i d t h t j = 2 5 c v e c = 2 0 v f = 2 0 m h z f t , c u r r e n t - g a i n - b a n d w i d t h ( m h z ) i c , c o l l e c t o r c u r r e n t ( m a ) f i g u r e , 2 " o n " v o l t a g e s 0 . 1 1 . 0 1 0 1 0 0 v , v o l t a g e ( v o l t s ) 1 . 4 1 . 2 1 . 0 0 . 8 0 . 6 0 . 4 0 . 2 0 0 v c e ( s a t ) @ 2 5 c , i c i b = 1 0 v c e ( s a t ) @ 1 2 5 c , i c i b = 1 0 v c e ( s a t ) @ - 5 5 c , i c i b = 1 0 v b e ( s a t ) @ 2 5 c , i c i b = 1 0 v b e ( s a t ) @ 1 2 5 c , i c i b = 1 0 v b e ( s a t ) @ - 5 5 c , i c i b = 1 0 v b e ( o n ) @ 2 5 c , v c e = 1 0 v v b e ( o n ) @ 1 2 5 c , v c e = 1 0 v v b e ( o n ) @ - 5 5 c , v c e = 1 0 v 1 2 0 1 0 0 8 0 6 0 4 0 2 0 0 t j = + 1 2 5 c 2 5 c - 5 5 c 0 . 1 1 . 0 1 0 1 0 0 i c , c o l l e c t o r c u r r e n t ( m a ) f i g u r e , 1 d c c u r r e n t g a i n h f e , d c c u r r e n t g a i n t y p i c a l c h a r a c t e r i s t i c s weitron http://www.weitron.com.tw 15-dec-06 3/4 MMBTA42 mmbta43
w e i t r o n h t t p : / / w w w . w e i t r o n . c o m . t w d i m a b c d e g h j k l m m i n 0 . 3 5 1 . 1 9 2 . 1 0 0 . 8 5 0 . 4 6 1 . 7 0 2 . 7 0 0 . 0 1 0 . 8 9 0 . 3 0 0 . 0 7 6 m a x 0 . 5 1 1 . 4 0 3 . 0 0 1 . 0 5 1 . 0 0 2 . 1 0 3 . 1 0 0 . 1 3 1 . 1 0 0 . 6 1 0 . 2 5 a b d e g m l h j t o p v i e w k c s o t - 2 3 s o t - 2 3 o u t l i n e d i m e n s i o n 4/4 15-dec-06 MMBTA42 mmbta43


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